Towards the Fundamental Limits of Noise Performance of III-V high Electron Mobility Transistor Microwave Amplifiers

MTL Seminar Series
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Speaker: Austin Minnich, Cal Tech
Location: Zoom (https://mit.zoom.us/j/99546205253)

Abstract: Microwave amplifiers based on III-V high electron mobility transistors (HEMTs) are a key component of scientific instrumentation. Lower noise devices are of intense interest for applications in radio astronomy and quantum computing. In this talk, I will discuss our efforts to identify and mitigate noise sources in HEMTs at cryogenic temperatures and thereby realize transistor amplifiers operating near the quantum noise limit.

Bio: Austin Minnich is a Professor of Mechanical Engineering and Applied Physics at the California Institute of Technology. He received his Bachelor’s degree from UC Berkeley in 2006 and his PhD from MIT in 2011. He is the recipient of several awards, including a 2019 Presidential Early Career Award for Scientists and Engineers.