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The revolution of the Internet of Things promises an exponential growth of connected devices. To sustain this market demand, the semiconductor industry requires a real breakthrough in energy efficiency both for the connected devices and for the communication infrastructure. Innovative solutions for very energy efficient systems are mandatory to continue the growth the semiconductor industry enjoyed, covering ultra-low power systems, energy management and harvesting. This talk will present the 28nm UTBB FD-SOI CMOS (Ultra-Thin Body and Buried-oxide Fully Depleted Silicon On Insulator) technology and its main features for analog, RF and mmW design. Two design examples (Gm-C analog filter and mmW Power Amplifier) will highlight the major advantages impacting system level features, and focus will be given on extensive usage of wide voltage range body biasing techniques.
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