III-V Nanowires – From Materials to Nanoscale Devices | Microsystems Technology Laboratories

Heike Riel, IBM Research – Zurich

Dr. Heike Riel received the Ph.D. in physics from the University of Bayreuth, Germany in 2002. She is IBM Fellow and the Manager of the Materials Integration and Nanoscale Devices – MIND Group with IBM Research—Zurich. Her research focuses on new materials and device concepts for future nanoelectronics e.g. steep slope devices for energy efficient computation.

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Approaching fundamental limits in scaling-down Si technology forces the industry to develop novel materials and devices. Bottom-up grown nanowires are attractive for integration of III-V on Si for electronics and optoelectronics. This talk will discuss challenges and opportunities from growth, electrical and optical characterization, effects of strain, and nanowire-based FETs, and Tunnel FETs for energy-efficient computing.

III-V Nanowires – From Materials to Nanoscale Devices

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